Onsemi - BCH807-40LT1G

BC547C by Diotec Semiconductor Ag is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.1A. It has a min DC current gain of 420 and can operate at temperatures up to 150°C. This transistor is commonly used in applications requiring low power dissipation and high frequency performance, such as audio amplifiers and switching circuits.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; JEDEC-95 Code: TO-236; Maximum Collector-Base Capacitance: 12 pF;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;

SMMUN2211LT1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 35. This surface mount device comes in a small outline package with Gull Wing terminals, suitable for AEC-Q101 automotive standards.

Diodes Inc. MMBT3906T-7-F is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and max operating temp of 150°C. Features GULL WING terminals, RECTANGULAR package shape, and SILICON transistor element material.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V; Qualification: Not Qualified;

SMMBT2907ALT3G by Onsemi is a PNP BJT with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for small outline applications requiring high DC current gain and fast turn-on/off times. Suitable for automotive electronics due to AEC-Q101 compliance and peak reflow temperature of 260°C.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;

NXP Semiconductors' BC817-40W,115 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it has a transition frequency of 100MHz making it suitable for high-speed switching circuits.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G3;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 200 Cel;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

2N3904-AP by STMicroelectronics is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 30, and max. operating temp of 150°C. Ideal for switching applications due to its max. collector-emitter voltage of 40V and transition frequency of 270MHz in a cylindrical package shape.