Onsemi - BD440G

  1. Home
  2. Onsemi - BD440G
BD440G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number BD440G
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 4 A;
Datasheet BD440G Datasheet
In Stock1,344
NAME DESCRIPTION
Nominal Transition Frequency (fT): 3 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 4 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 36 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
JEDEC-95 Code: TO-225AA
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 25
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,344 - -

Popular Products

Category Top Products

TIP115 by Crimson Semiconductor

TIP115

Crimson Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; No. of Terminals: 3;
TIP42C by General Transistor

TIP42C

General Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP42A by Baneasa S A

TIP42A

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
JANTX2N3055 by M/a-com Technology Solutions

JANTX2N3055

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 2; Case Connection: COLLECTOR;
TIP112 by Power Innovations

TIP112

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; No. of Terminals: 3; JEDEC-95 Code: TO-220AB; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
D44H11 by National Semiconductor

D44H11

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
MJE3055T by Onsemi

MJE3055T

Onsemi

MJE3055T by Onsemi is a NPN BJT transistor with max. power dissipation of 75W, ideal for switching applications. With a max. collector-emitter voltage of 60V and max. collector current of 10A, it operates b/w -55 to 150°C. Its package style is flange mount with through-hole terminals, making it suitable for various power circuit designs.
ULN2803A by Sanken Electric

ULN2803A

Sanken Electric

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
TIP111 by Power Innovations

TIP111

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR; Qualification: Not Qualified;
TIP35C by Motorola

TIP35C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Package Body Material: PLASTIC/EPOXY;
TIP41C by Motorola

TIP41C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
JAN2N3055 by Microsemi

JAN2N3055

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Application: SWITCHING; Minimum DC Current Gain (hFE): 20;
NJVMJD32CT4G by Onsemi

NJVMJD32CT4G

Onsemi

NJVMJD32CT4G by Onsemi is a PNP BJT with 100V VCEO, 3A IC, and 15W Ptot. Ideal for automotive applications due to AEC-Q101 compliance and -65 to 150°C operating range. Suitable for surface mount designs with Gull Wing terminals in a small outline package.
TIP111 by Texas Instruments

TIP111

Texas Instruments

TIP111 by Texas Instruments is a NPN Darlington BJT with max power dissipation of 50W. It has min hFE of 500 and max VCE of 80V, ideal for high-power applications in flange mount packages. Suitable for switching and amplification tasks due to its silicon transistor element material and single terminal position.
TIP29C by Microsemi

TIP29C

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSFM-T3; Transistor Element Material: SILICON; Qualification: Not Qualified;
MJE3055T by Rectron

MJE3055T

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
BCP56-16 by Infineon Technologies

BCP56-16

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
TIP112 by Crimson Semiconductor

TIP112

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
TIP117 by Central Semiconductor

TIP117

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
2N3055 by Crimson Semiconductor

2N3055

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;