BF115 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	BF115
Description	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .145 W; Maximum Collector Current (IC): .03 A;
Datasheet	BF115 Datasheet
In Stock	492

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	230 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	.03 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-72
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	40
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.145 W
Maximum Collector-Emitter Voltage:	30 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	175 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
492	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;