BUB323Z by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	BUB323Z
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 10 A;
Datasheet	BUB323Z Datasheet
In Stock	1,873

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	2 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	10 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	2
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	500
JESD-609 Code:	e0
Minimum Operating Temperature:	-65 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	350 V
Peak Reflow Temperature (C):	235

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,873	-	-

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