CAT25020ZI-G by Onsemi | Memory ICs

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Manufacturer	Onsemi
Manufacturer's Part Number	CAT25020ZI-G
Description	EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
Datasheet	CAT25020ZI-G Datasheet
In Stock	684

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.000002 Amp
Organization:	256X8
Sub-Category:	EEPROMs
Surface Mount:	YES
Maximum Supply Current:	2 mA
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	8
No. of Words:	256 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Write Protection:	HARDWARE/SOFTWARE
Technology:	CMOS
JESD-30 Code:	R-PDSO-G8
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
Endurance:	1000000 Write/Erase Cycles
Package Code:	TSSOP
Moisture Sensitivity Level (MSL):	1
Serial Bus Type:	SPI
Memory Density:	2048 bit
Memory IC Type:	EEPROM
JESD-609 Code:	e4
Minimum Operating Temperature:	-40 Cel
Memory Width:	8
Qualification:	Not Qualified
Package Equivalence Code:	TSSOP8,.19
No. of Words Code:	256
Minimum Data Retention Time:	100
Peak Reflow Temperature (C):	260
Parallel or Serial:	SERIAL
Terminal Pitch:	.635 mm
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	2/5

Pricing (USD)

Qty.	Unit Price	Ext. Price
684	$1.370	$937.080

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;

KSZ9031RNXIC by Microchip Technology is a network interface chip with 1 transceiver. It operates at a data rate of 1000 Mbps and has a nominal voltage of 1.2V. This chip is commonly used in industrial applications requiring Ethernet connectivity.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;