Onsemi - CM1263-06DE

CM1263-06DE by Onsemi

Image shown is a representation only.

Manufacturer	Onsemi
Manufacturer's Part Number	CM1263-06DE
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 12; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	CM1263-06DE Datasheet
In Stock	1,145

CM1263-06DE Technical Details

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	COMMON ANODE, 2 ELEMENTS
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum Clamping Voltage:	9.9 V
JEDEC-95 Code:	MO-229C
Sub-Category:	Transient Suppressors
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
Diode Element Material:	SILICON
No. of Terminals:	12
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-N12
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Polarity:	UNIDIRECTIONAL
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,145	$0.225	$257.625

Popular Products

L7805CV

Sgs-ates Componenti Electronici S P A

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Output Voltage-1: 5 V;

BSS84-7-F

SPC TECHNOLOGY/ MULTICOMP

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

SMBJ18CA

Microsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2N2222A

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

AT90CAN128-16AUR

Microchip Technology

AT90CAN128-16AUR by Microchip: 16 MHz clock, 8-bit data RAM, and 131072 ROM words. Ideal for industrial applications with CAN, SPI, TWI connectivity and low power mode. Contains 4 timers, 8 ADC channels, and supports up to 10-bit analog to digital conversion.

BSS138

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;

2N7002

Silicon Standard

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

LM555CM

Onsemi

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

IRLML6402TRPBF

Infineon Technologies

IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.

NUP2105LT1G

Onsemi

NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.

Category Top Products