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Manufacturer | Onsemi |
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Manufacturer's Part Number | CPH3351-TL-W |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JEDEC-95 Code: TO-236; Minimum DS Breakdown Voltage: 60 V; |
Datasheet | CPH3351-TL-W Datasheet |
In Stock | 1,457 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 1.8 A |
JEDEC-95 Code: | TO-236 |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | TIN BISMUTH |
JESD-609 Code: | e6 |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 60 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Peak Reflow Temperature (C): | 260 |
Maximum Drain-Source On Resistance: | .25 ohm |
Moisture Sensitivity Level (MSL): | 1 |