Onsemi - CPH5518-TL-H

  1. Home
  2. Onsemi - CPH5518-TL-H
CPH5518-TL-H by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number CPH5518-TL-H
Description NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): 1 A; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
Datasheet CPH5518-TL-H Datasheet
In Stock2,123
NAME DESCRIPTION
Maximum Collector Current (IC): 1 A
Maximum Power Dissipation (Abs): 1.2 W
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Operating Temperature: 150 Cel
Sub-Category: BIP General Purpose Small Signals
Peak Reflow Temperature (C): 260
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,123 $0.178 $377.894

Popular Products

Category Top Products

2N3055- by Ge Industrial Solutions

2N3055-

Ge Industrial Solutions

Small Signal Bipolar Transistors;
BC847C by Weitronic Enterprise

BC847C

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2222A by Continental Device India

2N2222A

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2907A by Infineon Technologies

MMBT2907A

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;
2N3904 by Toshiba

2N3904

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC547BTA by Onsemi

BC547BTA

Onsemi

BC547BTA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 200, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 45V and max. collector current of 0.1A in a cylindrical package style.
MMBT2907A by Weitronic Enterprise

MMBT2907A

Weitronic Enterprise

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
MMBTA06LT1G by Onsemi

MMBTA06LT1G

Onsemi

MMBTA06LT1G by Onsemi is a NPN BJT transistor with 100 min hFE, 80V VCEO, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating temperature ranges from -55 to 150°C.
ZTX651 by Diodes Incorporated

ZTX651

Diodes Incorporated

ZTX651 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 1W, hFE of 100, and max collector-emitter voltage of 60V. Ideal for applications requiring high frequency operation, such as RF amplifiers or oscillators due to its nominal transition frequency of 175MHz.
BCP56-16TX by Nexperia

BCP56-16TX

Nexperia

Nexperia's BCP56-16TX is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 155MHz. Features GULL WING terminals, small outline package, and can withstand peak reflow temp of 260°C.
BC807-25LT1G by Onsemi

BC807-25LT1G

Onsemi

BC807-25LT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.7V, hFE of 160, and IC of 0.5A. Ideal for switching applications, it operates b/w -55 to 150 °C and has a max VCE of 45V. With a small outline package style and surface mount capability, it offers high performance in compact designs.
BC807-25,215 by NXP Semiconductors

BC807-25,215

NXP Semiconductors

BC807-25,215 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a VCEsat of 0.7V, hFE of 160, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for small outline packages in surface mount configurations.
JANTX2N2222A by M/a-com Technology Solutions

JANTX2N2222A

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE; Maximum Turn Off Time (toff): 300 ns;
2N3904 by Nec Electronics America

2N3904

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): CYLINDRICAL;
BC817-40 by Taitron Components

BC817-40

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;
BC846BPN,115 by NXP Semiconductors

BC846BPN,115

NXP Semiconductors

NXP Semiconductors' BC846BPN,115 is a Small Signal BJT with NPN and PNP types. It has 2 elements for switching applications, with max power dissipation of 0.3W. Operating at up to 150°C, it features a collector-emitter voltage of 65V and transition frequency of 100MHz in a small outline package.
MMBT3906 by Microsemi

MMBT3906

Microsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
MMBT2907ALT3G by Onsemi

MMBT2907ALT3G

Onsemi

MMBT2907ALT3G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package and can handle up to 0.6A of collector current. The device operates at temperatures up to 150°C and features a turn-on time of 45ns.
BC846B by Promax-johnton

BC846B

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Terminal Form: GULL WING;
BC547-B by Infineon Technologies

BC547-B

Infineon Technologies

BC547-B by Infineon Technologies is a NPN BJT transistor with a min hFE of 200, ideal for switching applications. It has a max IC of 0.1A and can operate at temperatures up to 150°C. The transistor comes in a cylindrical package with through-hole terminals, making it suitable for various electronic circuits.