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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | CPH6635-TL-H |
| Description | N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Terminal Finish: TIN BISMUTH; Maximum Drain Current (Abs) (ID): 1.5 A; Maximum Drain Current (ID): 1.5 A; |
| Datasheet | CPH6635-TL-H Datasheet |
| In Stock | 1,433 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
CPH6635-TL-HOSCT ONSONSCPH6635-TL-H CPH6635-TL-HOSDKR CPH6635-TL-H-ND 2156-CPH6635-TL-H-ONTR CPH6635-TL-HOSTR |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 1.5 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN BISMUTH |
| JESD-609 Code: | e6 |
| Maximum Power Dissipation (Abs): | .8 W |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 1.5 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









