Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | DBD10G-E |
| Description | BRIDGE RECTIFIER DIODE; Surface Mount: NO; Config: BRIDGE, 4 ELEMENTS; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH; Diode Element Material: SILICON; |
| Datasheet | DBD10G-E Datasheet |
| In Stock | 1,285 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
DBD10G-EOSCT 2156-DBD10G-E DBD10G-EOSTB DBD10G-E-ND ONSONSDBD10G-E |
| Maximum Forward Voltage (VF): | 1.05 V |
| Config: | BRIDGE, 4 ELEMENTS |
| Diode Type: | BRIDGE RECTIFIER DIODE |
| Maximum Output Current: | 1 A |
| Maximum Repetitive Peak Reverse Voltage: | 600 V |
| Sub-Category: | Bridge Rectifier Diodes |
| Surface Mount: | NO |
| Terminal Finish: | TIN BISMUTH |
| JESD-609 Code: | e6 |
| Maximum Non Repetitive Peak Forward Current: | 30 A |
| Diode Element Material: | SILICON |
| No. of Elements: | 4 |
| Maximum Operating Temperature: | 150 Cel |









