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Manufacturer | Onsemi |
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Manufacturer's Part Number | DBD10G-TM-E |
Description | BRIDGE RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 600 V; Terminal Finish: TIN BISMUTH; No. of Elements: 4; Diode Element Material: SILICON; |
Datasheet | DBD10G-TM-E Datasheet |
In Stock | 2,045 |
NAME | DESCRIPTION |
---|---|
Maximum Forward Voltage (VF): | 1.05 V |
Config: | BRIDGE, 4 ELEMENTS |
Diode Type: | BRIDGE RECTIFIER DIODE |
Maximum Output Current: | 1 A |
Maximum Repetitive Peak Reverse Voltage: | 600 V |
Sub-Category: | Bridge Rectifier Diodes |
Surface Mount: | YES |
Terminal Finish: | TIN BISMUTH |
JESD-609 Code: | e6 |
Maximum Non Repetitive Peak Forward Current: | 30 A |
Diode Element Material: | SILICON |
No. of Elements: | 4 |
Maximum Operating Temperature: | 150 Cel |
Moisture Sensitivity Level (MSL): | 1 |