Onsemi - DBD10G-TM-E

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DBD10G-TM-E by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number DBD10G-TM-E
Description BRIDGE RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 600 V; Terminal Finish: TIN BISMUTH; No. of Elements: 4; Diode Element Material: SILICON;
Datasheet DBD10G-TM-E Datasheet
In Stock2,045
NAME DESCRIPTION
Other Names: 2156-DBD10G-TM-E
2156-DBD10G-TM-E-ONTR-ND
ONSONSDBD10G-TM-E
Maximum Forward Voltage (VF): 1.05 V
Config: BRIDGE, 4 ELEMENTS
Diode Type: BRIDGE RECTIFIER DIODE
Maximum Output Current: 1 A
Maximum Repetitive Peak Reverse Voltage: 600 V
Sub-Category: Bridge Rectifier Diodes
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Maximum Non Repetitive Peak Forward Current: 30 A
Diode Element Material: SILICON
No. of Elements: 4
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
2,045 $0.379 $775.055

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