Onsemi - EC4A01C

  1. Home
  2. Onsemi - EC4A01C
EC4A01C by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number EC4A01C
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;
Datasheet EC4A01C Datasheet
In Stock202
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .1 W
Field Effect Transistor Technology: JUNCTION
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
202 - -

Popular Products

Category Top Products

BC548 by Sinyork

BC548

Sinyork

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP127 by Iskra Semic Capacitors Industry

TIP127

Iskra Semic Capacitors Industry

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-609 Code: e0;
BC557B by Itt Components

BC557B

Itt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 180;
2N7002T by Weitron Technology

2N7002T

Weitron Technology

Other Transistors; Maximum Drain Current (ID): .115 A; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN LEAD; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 240;
TIP111 by Harris Semiconductor

TIP111

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
BC807-40 by Taiwan Semiconductor

BC807-40

Taiwan Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
TIP122 by Toshiba

TIP122

Toshiba

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP120 by Bharat Electronics

TIP120

Bharat Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
MJE3055T by Semiconductor Technology

MJE3055T

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
2N3055 by Iskra Semic Capacitors Industry

2N3055

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BC856B by Jiangsu Changjiang Electronics Technology

BC856B

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP127 by Mospec Semiconductor

TIP127

Mospec Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
BD679A by Inchange Semiconductor

BD679A

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP42C by General Electric Solid State

TIP42C

General Electric Solid State

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP47 by General Electric Solid State

TIP47

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP125 by Intersil

TIP125

Intersil

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP35C by Semitronics

TIP35C

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
MPSA42 by Harris Semiconductor

MPSA42

Harris Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
BC548 by Weitron Technology

BC548

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP120 by Thomson Consumer Electronics

TIP120

Thomson Consumer Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;