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Manufacturer | Onsemi |
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Manufacturer's Part Number | ECH8654-TL-H |
Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 5 A; No. of Terminals: 8; Maximum Pulsed Drain Current (IDM): 40 A; |
Datasheet | ECH8654-TL-H Datasheet |
In Stock | 1,996 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 5 A |
Maximum Pulsed Drain Current (IDM): | 40 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | Tin/Bismuth (Sn/Bi) |
JESD-609 Code: | e6 |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 20 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Peak Reflow Temperature (C): | 260 |
Maximum Drain-Source On Resistance: | .038 ohm |
Moisture Sensitivity Level (MSL): | 1 |