ECH8693R-TL-W by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	ECH8693R-TL-W
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-609 Code: e6; JESD-30 Code: R-PDSO-F8;
Datasheet	ECH8693R-TL-W Datasheet
In Stock	10,748

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	14 A
Maximum Pulsed Drain Current (IDM):	60 A
Surface Mount:	YES
Terminal Finish:	Tin/Bismuth (Sn/Bi)
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0091 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	2156-ECH8693R-TL-W-OS ECH8693R-TL-WOSTR ECH8693R-TL-WOSDKR ECH8693R-TL-WOSCT ECH8693R-TL-W-ND ONSONSECH8693R-TL-W
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e6
Minimum DS Breakdown Voltage:	24 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
10,748	-	-

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