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Manufacturer | Onsemi |
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Manufacturer's Part Number | ECH8693R-TL-W |
Description | N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-609 Code: e6; JESD-30 Code: R-PDSO-F8; |
Datasheet | ECH8693R-TL-W Datasheet |
In Stock | 10,748 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 14 A |
Maximum Pulsed Drain Current (IDM): | 60 A |
Surface Mount: | YES |
Terminal Finish: | Tin/Bismuth (Sn/Bi) |
No. of Terminals: | 8 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .0091 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e6 |
Minimum DS Breakdown Voltage: | 24 V |
Peak Reflow Temperature (C): | 260 |