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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | ECH8695R-TL-W |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Terminal Finish: Tin/Bismuth (Sn/Bi); JESD-609 Code: e6; Peak Reflow Temperature (C): 260; |
| Datasheet | ECH8695R-TL-W Datasheet |
| In Stock | 7,102 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
ECH8695R-TL-WOSDKR ECH8695R-TL-WOSCT 2156-ECH8695R-TL-W-OS ONSONSECH8695R-TL-W ECH8695R-TL-WOSTR |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 11 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Bismuth (Sn/Bi) |
| JESD-609 Code: | e6 |
| Maximum Power Dissipation (Abs): | 1.5 W |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 11 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









