Onsemi - EFC2J013NUZTDG

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EFC2J013NUZTDG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number EFC2J013NUZTDG
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet EFC2J013NUZTDG Datasheet
In Stock726
NAME DESCRIPTION
Other Names: EFC2J013NUZTDG-ND
2156-EFC2J013NUZTDG-OS
ONSONSEFC2J013NUZTDG
488-EFC2J013NUZTDGTR
488-EFC2J013NUZTDGCT
488-EFC2J013NUZTDGDKR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.8 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-PBCC-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
726 $0.206 $149.556

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