Onsemi - EFC2K102ANUZTDG

  1. Home
  2. Onsemi - EFC2K102ANUZTDG
EFC2K102ANUZTDG by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number EFC2K102ANUZTDG
Description Power Field-Effect Transistors; Terminal Finish: Copper/Nickel (Cu/Ni);
Datasheet EFC2K102ANUZTDG Datasheet
In Stock309
NAME DESCRIPTION
Terminal Finish: Copper/Nickel (Cu/Ni)
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
309 $0.760 $234.840

Popular Products

Category Top Products

SQ2318AES-T1_GE3 by Vishay Intertechnology

SQ2318AES-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQ2318AES-T1_GE3 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A IDM. Ideal for applications requiring high current handling capabilities, such as power supplies and motor control systems. Features include 8A ID, 0.031ohm RDS(on), and 46pF Crss for efficient performance in various electronic devices.
FDB035N10A by Onsemi

FDB035N10A

Onsemi

FDB035N10A by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 120A Max Drain Current, 0.0035 ohm Max RDS(on), and 333W Max Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a built-in DIODE, suitable for high-power requirements.
FDB3632 by Onsemi

FDB3632

Onsemi

Onsemi's FDB3632 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 12A Drain Current, and 0.009 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates b/w -55 to 175 °C with an EAS of 337 mJ.
IRF640NSTRLPBF by Infineon Technologies

IRF640NSTRLPBF

Infineon Technologies

Infineon's IRF640NSTRLPBF is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A IDM, 247mJ EAS, and 0.15 ohm RDS(ON). Operating from -55 to 175 °C, this MOSFET has a max power dissipation of 150W in a small outline package.
IRF540NPBF by International Rectifier

IRF540NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
FDB035N10A by Fairchild Semiconductor

FDB035N10A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 333 W; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE;
NTD20P06LT4G by Onsemi

NTD20P06LT4G

Onsemi

NTD20P06LT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 50A IDM, and 0.15 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 54W.
STW12N120K5 by STMicroelectronics

STW12N120K5

STMicroelectronics

STW12N120K5 by STMicroelectronics is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 48A IDM, and 0.69 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE, with 250W Pdiss and max temp of 150°C.
STD35P6LLF6 by STMicroelectronics

STD35P6LLF6

STMicroelectronics

STD35P6LLF6 by STMicroelectronics is a P-CHANNEL FET with 60V DS breakdown voltage, 140A IDM, and 0.036 ohm RDS(on). It is used for switching applications in enhancement mode with a max power dissipation of 70W.
IRF640 by Vishay Intertechnology

IRF640

Vishay Intertechnology

Vishay Intertechnology's IRF640 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 125W and operates in ENHANCEMENT MODE. Suitable for various electronic devices requiring high current switching capabilities.
FQT5P10TF by Fairchild Semiconductor

FQT5P10TF

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPZ40N04S5L7R4ATMA1 by Infineon Technologies

IPZ40N04S5L7R4ATMA1

Infineon Technologies

Infineon's IPZ40N04S5L7R4ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0107 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRLR3110ZTRPBF by Infineon Technologies

IRLR3110ZTRPBF

Infineon Technologies

IRLR3110ZTRPBF by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling up to 250A pulsed drain current. With 0.014 ohm max on-resistance and 175°C max operating temp, it's suitable for high-power systems.
NVMFD5C650NLWFT1G by Onsemi

NVMFD5C650NLWFT1G

Onsemi

NVMFD5C650NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 502A IDM, and 0.0058 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
IRF5210STRLPBF by International Rectifier

IRF5210STRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE; Package Shape: RECTANGULAR;
CSD19534Q5A by Texas Instruments

CSD19534Q5A

Texas Instruments

CSD19534Q5A by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 137A IDM, and 0.0176 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching circuits in various electronic devices.
FQD17P06TM by Onsemi

FQD17P06TM

Onsemi

FQD17P06TM by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 48A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it offers 0.135 ohm Drain-Source On Resistance and can handle up to 44W power dissipation at 150°C.
IRFP460LC by International Rectifier

IRFP460LC

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): 225;
IRFR4104TRPBF by International Rectifier

IRFR4104TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .0055 ohm;
IRLL110TRPBF by International Rectifier

IRLL110TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Additional Features: LOGIC LEVEL COMPATIBLE;