Onsemi - EFC3J018NUZTDG

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EFC3J018NUZTDG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number EFC3J018NUZTDG
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Operating Mode: DEPLETION MODE; JESD-30 Code: R-PBCC-N6;
Datasheet EFC3J018NUZTDG Datasheet
In Stock1,909
NAME DESCRIPTION
Other Names: EFC3J018NUZTDG-ND
488-EFC3J018NUZTDGDKR
ONSONSEFC3J018NUZTDG
488-EFC3J018NUZTDGTR
2156-EFC3J018NUZTDG-OS
488-EFC3J018NUZTDGCT
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-PBCC-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
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Pricing (USD)

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