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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | EFC6612R-TF |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 23 A; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 23 A; |
| Datasheet | EFC6612R-TF Datasheet |
| In Stock | 1,315 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
EFC6612R-TF-ND 488-EFC6612R-TFDKR 488-EFC6612R-TFTR 2156-EFC6612R-TF 488-EFC6612R-TFCT ONSONSEFC6612R-TF |
| Maximum Power Dissipation (Abs): | 2.5 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 23 A |
| Maximum Drain Current (Abs) (ID): | 23 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









