Onsemi - EFC8811R-TF

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EFC8811R-TF by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number EFC8811R-TF
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Shape: RECTANGULAR; Case Connection: SOURCE;
Datasheet EFC8811R-TF Datasheet
In Stock1,120,908
NAME DESCRIPTION
Other Names: ONSONSEFC8811R-TF
EFC8811R-TF-ND
EFC8811R-TFOSCT
2832-EFC8811R-TFTR
2156-EFC8811R-TF-OS
EFC8811R-TFOSDKR
EFC8811R-TFOSTR
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-PBCC-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
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Pricing (USD)

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