EMF5XV6T5G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	EMF5XV6T5G
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTOR RATIO 1;
Datasheet	EMF5XV6T5G Datasheet
In Stock	753

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	EMF5XV6T5G-ND EMF5XV6T5GOSTR EMF5XV6T5GOSCT =EMF5XV6T5GOSCT-ND 2156-EMF5XV6T5G-OS ONSONSEMF5XV6T5G
Polarity or Channel Type:	NPN AND PNP
Minimum DC Current Gain (hFE):	80
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	BUILT IN BIAS RESISTOR RATIO 1
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
753	$0.062	$46.686

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