Onsemi - EMX1DXV6T1G

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EMX1DXV6T1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number EMX1DXV6T1G
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
Datasheet EMX1DXV6T1G Datasheet
In Stock1,646
NAME DESCRIPTION
Nominal Transition Frequency (fT): 180 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
1,646 $0.240 $395.040

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