Onsemi - EN930

  1. Home
  2. Onsemi - EN930
EN930 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number EN930
Description Small Signal Bipolar Transistors;
Datasheet EN930 Datasheet
In Stock2,862
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,862 - -

Popular Products

Category Top Products

MMBT3906WT1G by Onsemi

MMBT3906WT1G

Onsemi

MMBT3906WT1G by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 30, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates b/w -55 to 150°C with a max. collector-emitter voltage of 40V and transition frequency of 250MHz.
MMBT3904LT1G by Onsemi

MMBT3904LT1G

Onsemi

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
ULN2803AFWG(C,ELHA) by Toshiba

ULN2803AFWG(C,ELHA)

Toshiba

Toshiba's ULN2803AFWG(C,ELHA) is an NPN BJT with 8 elements and 18 terminals. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications in small outline packages with Gull Wing terminals.
2N3906 by Nec Electronics America

2N3906

Nec Electronics America

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
2N3904 by Renesas Electronics

2N3904

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847,215 by NXP Semiconductors

BC847,215

NXP Semiconductors

NXP Semiconductors' BC847,215 is a NPN BJT transistor with VCEsat of 0.6V, hFE of 110, and IC of 0.1A. Ideal for switching applications in small outline packages with 3 terminals. Operates at max temp of 150°C and has a transition frequency of 100MHz.
BC847B by Forward International Electronics

BC847B

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
2N3906 by Solid State Devices

2N3906

Solid State Devices

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V; No. of Elements: 1;
MMBT3904 by Rectron

MMBT3904

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;
2N3904 by National Semiconductor

2N3904

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3906 by Crimson Semiconductor

2N3906

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-25 by STMicroelectronics

BC817-25

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
MMBT3906 by Nte Electronics

MMBT3906

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: AMPLIFIER;
2N3904-AP by STMicroelectronics

2N3904-AP

STMicroelectronics

2N3904-AP by STMicroelectronics is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 30, and max. operating temp of 150°C. Ideal for switching applications due to its max. collector-emitter voltage of 40V and transition frequency of 270MHz in a cylindrical package shape.
BC547B by NXP Semiconductors

BC547B

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2907(A) by Digitron Semiconductors

2N2907(A)

Digitron Semiconductors

2N2907(A) by Digitron Semiconductors is a PNP BJT transistor with VCEsat of 0.4V, hFE of 100, and IC of 0.6A. Ideal for switching applications due to its fast ton of 45ns and toff of 100ns. Operates at a max temp of 175°C with a max VCE of 60V.
NSM4002MR6T1G by Onsemi

NSM4002MR6T1G

Onsemi

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.
MMBT5551LT1G by Onsemi

MMBT5551LT1G

Onsemi

MMBT5551LT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.2V, hFE of 30, and IC of 0.06A. Ideal for switching applications, it operates b/w -55 to 150°C with a max VCE of 160V. Its small outline package makes it suitable for surface mount designs.
BC817-40 by Diodes Incorporated

BC817-40

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT3906,215 by Nexperia

MMBT3906,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;