Onsemi - ENGAFGHL50T65SQDC

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ENGAFGHL50T65SQDC by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number ENGAFGHL50T65SQDC
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 467 W; Maximum Collector Current (IC): 88.7 A; Minimum Operating Temperature: -55 Cel;
Datasheet ENGAFGHL50T65SQDC Datasheet
In Stock397
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 88.7 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -55 Cel
Nominal Turn Off Time (toff): 100.5 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 467 W
Maximum Collector-Emitter Voltage: 650 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 36.76 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: COLLECTOR
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