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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | ESD8501V5MUT5G |
| Description | TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | ESD8501V5MUT5G Datasheet |
| In Stock | 318 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Config: | SINGLE |
| Diode Type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL GOLD PALLADIUM |
| Maximum Reverse Current: | .1 uA |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | CHIP CARRIER |
| Technology: | AVALANCHE |
| JESD-30 Code: | R-PBCC-N2 |
| Minimum Breakdown Voltage: | 6 V |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Breakdown Voltage: | 9 V |
| Reverse Test Voltage: | 5 V |
| Maximum Repetitive Peak Reverse Voltage: | 5 V |
| Maximum Clamping Voltage: | 11.5 V |
| Minimum Operating Temperature: | -65 Cel |
| Diode Element Material: | SILICON |
| Nominal Breakdown Voltage: | 7 V |
| Reference Standard: | IEC-61000-4-2, 4-5 |
| Peak Reflow Temperature (C): | 260 |
