Onsemi - FDMB2307NZ

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FDMB2307NZ by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMB2307NZ
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-N6;
Datasheet FDMB2307NZ Datasheet
In Stock10,463
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.7 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2.2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 320 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Maximum Drain Current (Abs) (ID): 9.7 A
Peak Reflow Temperature (C): 260
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