Onsemi - FDMC2523P

FDMC2523P by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMC2523P
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag); Minimum DS Breakdown Voltage: 150 V;
Datasheet FDMC2523P Datasheet
In Stock5,917
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3 A
Maximum Pulsed Drain Current (IDM): 12 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
No. of Terminals: 5
Maximum Power Dissipation (Abs): 25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.5 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3 A
Peak Reflow Temperature (C): NOT SPECIFIED
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