Onsemi - FDMC2610

FDMC2610 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMC2610
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Datasheet FDMC2610 Datasheet
In Stock10,037
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.2 A
Maximum Pulsed Drain Current (IDM): 15 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
No. of Terminals: 8
Maximum Power Dissipation (Abs): 42 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .397 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 9.5 A
Peak Reflow Temperature (C): NOT SPECIFIED
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