Onsemi - FDMC4435BZ-F127

  1. Home
  2. Onsemi - FDMC4435BZ-F127
FDMC4435BZ-F127 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number FDMC4435BZ-F127
Description Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
Datasheet FDMC4435BZ-F127 Datasheet
In Stock229,842
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
JESD-609 Code: e4
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
229,842 - -

Popular Products

Category Top Products

IRF640 by Vishay Siliconix

IRF640

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
FDB33N25TM by Fairchild Semiconductor

FDB33N25TM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 235 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 918 mJ;
FDD86102LZ by Onsemi

FDD86102LZ

Onsemi

FDD86102LZ by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 40A Pulsed Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and operates in ENHANCEMENT MODE. Suitable for surface mount, this transistor has a max power dissipation of 54W and can handle up to 8A Drain Current.
ZXMP6A17E6TA by Zetex Plc

ZXMP6A17E6TA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified;
IRF5305PBF by Infineon Technologies

IRF5305PBF

Infineon Technologies

IRF5305PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM and 0.06 ohm RDS(ON), suitable for high-power circuits. With a max power dissipation of 110W and operating temperature up to 175°C, it ensures reliable performance in various environments.
FDB2532 by Fairchild Semiconductor

FDB2532

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 310 W; Qualification: Not Qualified; Maximum Operating Temperature: 175 Cel;
IRF9540PBF by International Rectifier

IRF9540PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 19 A;
IRF7343TRPBF by International Rectifier

IRF7343TRPBF

International Rectifier

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
IRF740PBF by International Rectifier

IRF740PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFR7440TRPBF by Infineon Technologies

IRFR7440TRPBF

Infineon Technologies

IRFR7440TRPBF by Infineon is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 0.0024 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, it features a max IDM of 760A and EAS of 376mJ. Operating in ENHANCEMENT MODE, this transistor has a max temp of 175°C and can handle up to 180A drain current.
IRF7341TRPBF by Infineon Technologies

IRF7341TRPBF

Infineon Technologies

Infineon's IRF7341TRPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 42A IDM, 140mJ EAS, and 0.05 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it suits various high-power electronic designs.
AUIRFZ44N by International Rectifier

AUIRFZ44N

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
IRFS3306TRLPBF by Infineon Technologies

IRFS3306TRLPBF

Infineon Technologies

IRFS3306TRLPBF by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 620A IDM, 184mJ EAS, and 0.0042 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 230W at 175°C.
RFD14N05LSM9A by Onsemi

RFD14N05LSM9A

Onsemi

RFD14N05LSM9A by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 14A Drain Current, and 0.1 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating at up to 175°C, it features GULL WING terminals in a RECTANGULAR package.
FDMC86139P by Onsemi

FDMC86139P

Onsemi

FDMC86139P by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage and 30A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.067 ohm RDS(on), and operates in ENHANCEMENT MODE.
IPZ40N04S5L2R8ATMA1 by Infineon Technologies

IPZ40N04S5L2R8ATMA1

Infineon Technologies

Infineon's IPZ40N04S5L2R8ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0038 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRFR4620TRLPBF by International Rectifier

IRFR4620TRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
IRF9530NPBF by International Rectifier

IRF9530NPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; Maximum Drain-Source On Resistance: .2 ohm; Maximum Pulsed Drain Current (IDM): 56 A;
IPB020N10N5ATMA1 by Infineon Technologies

IPB020N10N5ATMA1

Infineon Technologies

Infineon's IPB020N10N5ATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.002 ohm RDS(on), and 120A ID. Ideal for switching applications due to its 480A IDM and built-in diode. Features GULL WING terminals in a SMALL OUTLINE package style.
IRF530NSTRLPBF by International Rectifier

IRF530NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 60 A;