FDMC510P-F106 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FDMC510P-F106
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 20 V;
Datasheet	FDMC510P-F106 Datasheet
In Stock	25,757

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	82 ns
Maximum Drain Current (ID):	18 A
Maximum Pulsed Drain Current (IDM):	50 A
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	5
Maximum Power Dissipation (Abs):	41 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	812 ns
JESD-30 Code:	S-PDSO-N5
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.008 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	37 mJ
Maximum Feedback Capacitance (Crss):	1110 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Maximum Drain Current (Abs) (ID):	18 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
25,757	-	-

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