Onsemi - FDMC8030

  1. Home
  2. Onsemi - FDMC8030
FDMC8030 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number FDMC8030
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14 W; Package Shape: SQUARE; Maximum Pulsed Drain Current (IDM): 50 A;
Datasheet FDMC8030 Datasheet
In Stock14,962
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 23 ns
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 50 A
Surface Mount: YES
Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
No. of Terminals: 4
Maximum Power Dissipation (Abs): 14 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 43 ns
JESD-30 Code: S-PDSO-N4
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 14 W
Maximum Drain-Source On Resistance: .01 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 21 mJ
Maximum Feedback Capacitance (Crss): 30 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 12 A
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
14,962 - -

Popular Products

Category Top Products

ZVP2106A by Zetex Plc

ZVP2106A

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Maximum Drain Current (Abs) (ID): .28 A; JESD-609 Code: e3;
BSS138W-7-F by Diodes Incorporated

BSS138W-7-F

Diodes Incorporated

Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
2N7002DWS-7 by Diodes Incorporated

2N7002DWS-7

Diodes Incorporated

Diodes Inc. 2N7002DWS-7 is a N-channel FET with 60V DS breakdown voltage, 0.247A max drain current, and 4 ohm max on resistance. Ideal for switching applications in small outline packages, it operates from -55 to 150°C with MIL-STD-202 compliance.
2N7002 by Vishay Intertechnology

2N7002

Vishay Intertechnology

2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
2N7002K by Formosa Microsemi

2N7002K

Formosa Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
BSS123 by Onsemi

BSS123

Onsemi

BSS123 by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 0.36W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
TN2404K-T1-GE3 by Vishay Intertechnology

TN2404K-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's TN2404K-T1-GE3 is a N-channel FET with 240V DS breakdown voltage, 0.2A max drain current, and 4 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.36W at 150°C.
2N7002BKMB,315 by Nexperia

2N7002BKMB,315

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Transistor Application: SWITCHING; JESD-609 Code: e3;
NDS332P by Fairchild Semiconductor

NDS332P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
ZVP2106ASTOA by Zetex Plc

ZVP2106ASTOA

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Maximum Drain Current (ID): .28 A;
2N7002P,235 by Nexperia

2N7002P,235

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; IEC-60134; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: 1.6 ohm;
2N7002T by Changzhou Galaxy Century Microelectronics

2N7002T

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 5 pF; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY;
ZXMN10A07FTA by Diodes Incorporated

ZXMN10A07FTA

Diodes Incorporated

ZXMN10A07FTA by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 0.56A max drain current, and 0.7 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.806W. The transistor features a small outline package style and can withstand temperatures up to 150°C.
2N7002DWG by Changzhou Galaxy Century Microelectronics

2N7002DWG

Changzhou Galaxy Century Microelectronics

Small Signal Field-Effect Transistors;
NX3008NBKW,115 by Nexperia

NX3008NBKW,115

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-609 Code: e3; JESD-30 Code: R-PDSO-G3;
BSS84AKS,115 by Nexperia

BSS84AKS,115

Nexperia

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 8.5 ohm; Minimum DS Breakdown Voltage: 50 V;
NDS9407 by National Semiconductor

NDS9407

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7002 by Panjit International

2N7002

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
BSS138 by Good-ark Electronics

BSS138

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
FDMC8030 by Onsemi

FDMC8030

Onsemi

FDMC8030 by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 50A Max Pulsed Drain Current, and 21mJ Avalanche Energy Rating. With a SQUARE package shape and NO LEAD terminals, it operates in ENHANCEMENT MODE with a max power dissipation of 14W at 150°C.