Onsemi - FDMC86520DC

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FDMC86520DC by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMC86520DC
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Minimum DS Breakdown Voltage: 60 V; Package Style (Meter): SMALL OUTLINE;
Datasheet FDMC86520DC Datasheet
In Stock16,138
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 17 A
Maximum Pulsed Drain Current (IDM): 80 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 5
Maximum Power Dissipation (Abs): 73 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0063 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 128 mJ
JEDEC-95 Code: MO-240BA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 40 A
Peak Reflow Temperature (C): 260
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