Onsemi - FDMC89521L

  1. Home
  2. Onsemi - FDMC89521L
FDMC89521L by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number FDMC89521L
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
Datasheet FDMC89521L Datasheet
In Stock15,065
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8.2 A
Surface Mount: YES
Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
No. of Terminals: 4
Maximum Power Dissipation (Abs): 16 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N4
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 1.9 W
Maximum Drain-Source On Resistance: .017 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 15 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Additional Features: AVALANCHE ENERGY RATED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
15,065 - -

Popular Products

Category Top Products

BSS84-7-F by SPC TECHNOLOGY/ MULTICOMP

BSS84-7-F

SPC TECHNOLOGY/ MULTICOMP

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
BSS138PW by NXP Semiconductors

BSS138PW

NXP Semiconductors

NXP Semiconductors' BSS138PW is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features 1.6 ohm RDS(on) and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has GULL WING terminals and is surface mountable.
BSS123G by Changzhou Galaxy Century Microelectronics

BSS123G

Changzhou Galaxy Century Microelectronics

Small Signal Field-Effect Transistors;
ZVP1320FTA by Zetex Plc

ZVP1320FTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 200 V; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Position: DUAL;
NX2301P,215 by NXP Semiconductors

NX2301P,215

NXP Semiconductors

NX2301P,215 by NXP Semiconductors is a P-CHANNEL FET with 20V DS Breakdown Voltage and 0.19 ohm RDS(ON). It is used for SWITCHING applications in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and meets AEC-Q101 standards.
BSS138BKS,115 by Nexperia

BSS138BKS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .32 A; Package Shape: RECTANGULAR; Additional Features: LOGIC LEVEL COMPATIBLE;
2N7002-7-F by SPC TECHNOLOGY/ MULTICOMP

2N7002-7-F

SPC TECHNOLOGY/ MULTICOMP

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
FDV302PD87Z by Fairchild Semiconductor

FDV302PD87Z

Fairchild Semiconductor

Fairchild Semiconductor's FDV302PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
2N7000BU by Onsemi

2N7000BU

Onsemi

2N7000BU by Onsemi is a N-CHANNEL FET with max drain current of 0.2A and power dissipation of 0.4W. Ideal for low-power applications, it operates at up to 150°C temp, featuring metal-oxide semiconductor tech. Suitable for single configuration circuits requiring efficient switching capabilities.
NDC7003P by National Semiconductor

NDC7003P

National Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 6;
BSS806NH6327XTSA1 by Infineon Technologies

BSS806NH6327XTSA1

Infineon Technologies

BSS806NH6327XTSA1 by Infineon is a N-CHANNEL FET with 20V DS breakdown voltage, 9.3A pulsed drain current, and 0.057ohm max on-resistance. Ideal for applications requiring small outline package style, it operates in enhancement mode with a max temperature of 150°C.
FDV301N_NL by Fairchild Semiconductor

FDV301N_NL

Fairchild Semiconductor

FDV301N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.22A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY transistor comes in a GULL WING package style suitable for surface mount assembly.
BSS123 by Micro Commercial Components

BSS123

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 100 V; Qualification: Not Qualified;
BSS139IXTSA1 by Infineon Technologies

BSS139IXTSA1

Infineon Technologies

Small Signal Field-Effect Transistors;
2N7002K by NXP Semiconductors

2N7002K

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Minimum Operating Temperature: -65 Cel;
BSS138W-7-F by Diodes Incorporated

BSS138W-7-F

Diodes Incorporated

Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
SI2328DS-T1-E3 by Vishay Intertechnology

SI2328DS-T1-E3

Vishay Intertechnology

SI2328DS-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 100V DS Breakdown Voltage, 1.15A Drain Current, and 0.25 ohm On Resistance. Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation, GULL WING terminals, and compact SMALL OUTLINE package style.
2N7000_D74Z by Fairchild Semiconductor

2N7000_D74Z

Fairchild Semiconductor

2N7000_D74Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.2A Drain Current and 5 ohm On Resistance. Suitable for low-power circuits due to its 0.4W Power Dissipation and 150°C Operating Temperature range.
SI2319CDS-T1-GE3 by Vishay Intertechnology

SI2319CDS-T1-GE3

Vishay Intertechnology

SI2319CDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 40V breakdown voltage and 4.4A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.5W. The small outline package and -55 to 150°C operating temperature range make it suitable for various electronic designs.
BSS138P,215 by Nexperia

BSS138P,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;