Onsemi - FDMD8680

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FDMD8680 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMD8680
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 39 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Feedback Capacitance (Crss): 77 pF;
Datasheet FDMD8680 Datasheet
In Stock28
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 64 ns
Maximum Drain Current (ID): 66 A
Maximum Pulsed Drain Current (IDM): 487 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 39 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 68 ns
JESD-30 Code: R-PDSO-N8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Drain-Source On Resistance: .0047 ohm
Avalanche Energy Rating (EAS): 337 mJ
Maximum Feedback Capacitance (Crss): 77 pF
JEDEC-95 Code: MO-240AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Maximum Drain Current (Abs) (ID): 66 A
Peak Reflow Temperature (C): NOT SPECIFIED
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