FDMS1D2N03DSD by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FDMS1D2N03DSD
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN MOSFET AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 26 W; Terminal Finish: MATTE TIN; Terminal Position: DUAL;
Datasheet	FDMS1D2N03DSD Datasheet
In Stock	1,284

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN MOSFET AND DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	70 A
Maximum Pulsed Drain Current (IDM):	362 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	26 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.00325 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	121 mJ
JEDEC-95 Code:	MO-229
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Maximum Drain Current (Abs) (ID):	70 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,284	$1.029	$1,321.236

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