FDMS3600S by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FDMS3600S
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: QUAD; Case Connection: DRAIN SOURCE;
Datasheet	FDMS3600S Datasheet
In Stock	27,617

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	15 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	7
Maximum Power Dissipation (Abs):	2.5 W
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-PQFP-N7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN SOURCE
Maximum Drain-Source On Resistance:	.0056 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	90 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	25 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	40 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
27,617	-	-

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