Onsemi - FDMS3660S-AU01

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FDMS3660S-AU01 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMS3660S-AU01
Description N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Case Connection: DRAIN SOURCE; JESD-30 Code: R-PDSO-F6;
Datasheet FDMS3660S-AU01 Datasheet
In Stock1,777
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 13 A
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN SOURCE
Maximum Drain-Source On Resistance: .008 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 70 pF
JEDEC-95 Code: MO-240AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): 260
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