Onsemi - FDP038AN06A0-F102

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FDP038AN06A0-F102 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDP038AN06A0-F102
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 60 V;
Datasheet FDP038AN06A0-F102 Datasheet
In Stock518
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 175 ns
Maximum Drain Current (ID): 17 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 310 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 115 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0038 ohm
Avalanche Energy Rating (EAS): 625 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 17 A
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