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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FDZ3N513ZT |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain Current (Abs) (ID): 1.1 A; Operating Mode: DEPLETION MODE; |
| Datasheet | FDZ3N513ZT Datasheet |
| In Stock | 1,795 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1.1 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 1 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| JESD-30 Code: | S-PBGA-B4 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | BALL |
| Operating Mode: | DEPLETION MODE |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Drain-Source On Resistance: | .52 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Feedback Capacitance (Crss): | 25 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e1 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Additional Features: | ESD PROTECTION |
| Maximum Drain Current (Abs) (ID): | 1.1 A |
| Peak Reflow Temperature (C): | 260 |
