FDZ451PZ by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FDZ451PZ
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: BALL;
Datasheet	FDZ451PZ Datasheet
In Stock	719

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.6 A
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	4
Maximum Power Dissipation (Abs):	1.3 W
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
JESD-30 Code:	S-PBGA-B4
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	BALL
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.14 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	2156-FDZ451PZ FAIFSCFDZ451PZ
Maximum Feedback Capacitance (Crss):	70 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e1
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
719	$0.054	$38.826

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TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;