Onsemi - FGA15S125P

FGA15S125P by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGA15S125P
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Maximum Collector Current (IC): 30 A; Terminal Position: SINGLE;
Datasheet FGA15S125P Datasheet
In Stock2,181
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 30 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Nominal Turn Off Time (toff): 670 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 136 W
Maximum Collector-Emitter Voltage: 1250 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 331 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 25 V
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