Onsemi - FGA25S125P-SN00337

FGA25S125P-SN00337 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGA25S125P-SN00337
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT;
Datasheet FGA25S125P-SN00337 Datasheet
In Stock1,143
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 50 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7.5 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -55 Cel
Nominal Turn Off Time (toff): 722 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 250 W
Maximum Collector-Emitter Voltage: 1250 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 325.2 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 25 V
Maximum VCEsat: 2.35 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,143 $1.236 $1,412.748

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