Onsemi - FGH40T65UPD

FGH40T65UPD by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGH40T65UPD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 80 A; Terminal Finish: MATTE TIN;
Datasheet FGH40T65UPD Datasheet
In Stock2,273
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 80 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 34 ns
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
Nominal Turn Off Time (toff): 213 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 268 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 57 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 22 ns
JEDEC-95 Code: TO-247AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
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