Onsemi - FGH75T65SHDTLN4

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FGH75T65SHDTLN4 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGH75T65SHDTLN4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 150 A; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
Datasheet FGH75T65SHDTLN4 Datasheet
In Stock1,068
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 150 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7.5 V
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -55 Cel
No. of Terminals: 4
Maximum Power Dissipation (Abs): 455 W
Maximum Collector-Emitter Voltage: 650 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.1 V
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