Onsemi - FJB3307DTM-H1

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FJB3307DTM-H1 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FJB3307DTM-H1
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; JESD-30 Code: R-PSSO-G2; Package Body Material: PLASTIC/EPOXY;
Datasheet FJB3307DTM-H1 Datasheet
In Stock542
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 15
No. of Terminals: 2
Maximum Collector-Emitter Voltage: 400 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
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