Onsemi - FJC1386R

  1. Home
  2. Onsemi - FJC1386R
FJC1386R by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number FJC1386R
Description PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE; Terminal Position: SINGLE;
Datasheet FJC1386R Datasheet
In Stock1,496
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 180
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,496 - -

Popular Products

Category Top Products

MMBT3904Q-7-F by Diodes Incorporated

MMBT3904Q-7-F

Diodes Incorporated

MMBT3904Q-7-F by Diodes Inc. is a NPN BJT transistor for switching applications. It has a VCEsat of 0.3V, hFE of 30, and can handle IC up to 0.2A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds.
2N2219A by Semicoa

2N2219A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N3904 by Motorola

2N3904

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC547B by Microchip Technology

BC547B

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;
2N2222A by Taitron Components

2N2222A

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
BC81725 by Zetex Plc

BC81725

Zetex Plc

BC81725 by Zetex Plc is a NPN BJT transistor with hFE of 160, VCE of 45V, and IC of 0.5A. Ideal for small signal applications in electronics due to its high transition frequency of 200MHz and compact small outline package. Suitable for surface mount designs requiring low power dissipation and high reliability.
JANTX2N2222A by Crystalonics

JANTX2N2222A

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Package Style (Meter): CYLINDRICAL;
BC817-25 by Siemens

BC817-25

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
SMMBT2907ALT1G by Onsemi

SMMBT2907ALT1G

Onsemi

SMMBT2907ALT1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 60V. Ideal for small outline applications requiring high DC current gain (hFE) of 100 and operating temperature up to 150°C. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance and peak reflow temp of 260°C.
BC857B,215 by Nexperia

BC857B,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BC846-B by Kec

BC846-B

Kec

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 65 V;
BC547C by Surge Components

BC547C

Surge Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: WIRE;
2N2907A by Microchip Technology

2N2907A

Microchip Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; No. of Elements: 1;
2N2907A by Diotec Semiconductor Ag

2N2907A

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; JESD-609 Code: e3;
2N3904TFR by Onsemi

2N3904TFR

Onsemi

2N3904TFR by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Operates in temp range -55 to 150°C, with turn on time of 70ns and turn off time of 250ns.
2N2222AUBC by Microsemi

2N2222AUBC

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
BC847C,215 by NXP Semiconductors

BC847C,215

NXP Semiconductors

NXP Semiconductors' BC847C,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 420, it operates at max temp of 150°C. This GULL WING terminal transistor has a max IC of 0.1A and VCE of 45V, ideal for small outline packages in electronics.
MMBT2222ALP4-7B by Diodes Incorporated

MMBT2222ALP4-7B

Diodes Incorporated

Diodes Inc.'s MMBT2222ALP4-7B is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp. Package: PLASTIC/EPOXY CHIP CARRIER with NO LEAD terminals.
SMBT3904DW1T1G by Onsemi

SMBT3904DW1T1G

Onsemi

SMBT3904DW1T1G by Onsemi is a NPN BJT with hFE of 100, fT of 300 MHz, and IC of 0.2 A. Ideal for small signal applications in electronics due to its surface mount capability and max operating temperature of 150°C.
2N3904 by New Jersey Semiconductor Products

2N3904

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V; Transistor Element Material: SILICON;