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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FJP3307D-H1 |
| Description | NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel; |
| Datasheet | FJP3307D-H1 Datasheet |
| In Stock | 1,247 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 8 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 15 |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 80 W |
| Maximum Collector-Emitter Voltage: | 400 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 3700 ns |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum VCEsat: | 3 V |
| Maximum Fall Time (tf): | 700 ns |
