Onsemi - FQH44N10-133

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FQH44N10-133 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FQH44N10-133
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Feedback Capacitance (Crss): 110 pF; Maximum Drain-Source On Resistance: .039 ohm;
Datasheet FQH44N10-133 Datasheet
In Stock149
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 435 ns
Maximum Drain Current (ID): 48 A
Maximum Pulsed Drain Current (IDM): 192 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 180 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 400 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .039 ohm
Avalanche Energy Rating (EAS): 530 mJ
Maximum Feedback Capacitance (Crss): 110 pF
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 48 A
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