Onsemi - FQPF17N40T

FQPF17N40T by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FQPF17N40T
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Terminal Position: SINGLE; No. of Elements: 1;
Datasheet FQPF17N40T Datasheet
In Stock892
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.5 A
Maximum Pulsed Drain Current (IDM): 38 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 56 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .27 ohm
Avalanche Energy Rating (EAS): 1000 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 400 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 9.5 A
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Pricing (USD)

Qty. Unit Price Ext. Price
892 $0.841 $750.172

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