Onsemi - FQPF19N10

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FQPF19N10 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FQPF19N10
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .1 ohm;
Datasheet FQPF19N10 Datasheet
In Stock1,379
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 13.6 A
Maximum Pulsed Drain Current (IDM): 54.4 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 38 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .1 ohm
Avalanche Energy Rating (EAS): 220 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 13.6 A
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Pricing (USD)

Qty. Unit Price Ext. Price
1,379 $0.590 $813.610

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